Abstract
We study the influence of the frequency and the atomic disorder on the acoustoelectric effect in a system; semiconductor on a piezoelectric substrat. When a semiconductor is subjected to an acoustic wave, the dislocations perform mechanical vibrations around their equilibrium position. It results an atomic disorder and an increase in the concentration of the defects. The detailled analysis of the acoustoelectric voltage allows to study the general physical properties of the piezoelectric wave guide and the influence of the disorder on the mobility of the semiconductor charge carriers
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