Abstract
A new interpretation of the experiments of emission of hot electrons from shallow p- n silicon junctions is presented along with experimental results on the emitted electronic current as a function of the thickness of the n silicon layer. From the experimental results the values of the parameters characterizing inelastic scattering may be deduced but all important mechanisms must be taken into account. The most important mechanism of energy loss is shown to be the interaction with the electron gas, this is due to the high electron density in the n-layer. The theoretical curves obtained using this simple model are compared with the experiment and a very good agreement is obtained without any adjustable parameter. The influence of impact ionization has been also taken into account and is shown to be only a slight correction. A limiting value of l i >400 Å is estimated for the mean free path for impact ionization.
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