Inert two-dimensional accumulation layers at the free ZnO surface produced by hydrogen implantation

Abstract

Low-energy hydrogen-ion implantation is use to produced extremely strong electron accumulation layers on ZnO. Such layers are 10–20 Å wide and resemble closely accumulation layers obtained by conventional methods. They are, however, completely insensitive to oxygen and thus constitute the only two-dimensional electron gas system on a surface that is both free and inert.