Abstract
A review of the application of medium‐energy resolution inelastic x‐ray scattering spectroscopy on problems of solid‐state physics is presented, where medium‐energy resolution means the range around 1 eV. The review starts with a description of the fundamental information about electron density–density correlation, which can be obtained by means of IXSS, and how this information can be related to electronic excitation (band structure) and dielectric screening (dielectric functions). Then the necessary experimental synchrotron based setup for IXSS is demonstrated at the HASYLAB inelastic‐scattering beamline as an example, where the method of dispersion compensation is stressed. As the first solid‐state problem, investigated with IXSS, the following special features of electron density–density correlations in s‐p metals and semiconductors are presented: (1) lattice‐induced fine structure in the dielectric response of Al metal, comparison with theoretical calculations, (2) lattice‐induced additional collective excitation, demonstrated on Be, (3) plasmon‐Fano‐resonances, detected in the dielectric response of Si, and (4) first direct experimental evidence for volume plasmon bands in Si by means of standing‐wave inelastic scattering. The investigation of electronic properties of layered structures by means of IXSS is demonstrated by means of experiments on graphite and graphite based alkali‐metal intercalation compounds. Finally, it is stressed that IXSS also allows the measurement of core excitation spectra, so that edge structures in the 10–1000 eV range of low‐Z elements can be investigated using deeply penetrating hard x‐rays in the 10 keV range, thus making accessible the edge fine structure of low‐Z components of solids in environments, which forbid the application of VUV or electrons. Application of IXSS core excitation is demonstrated both on core excitation spectra of the 1s edge of Li in LiC6 intercalation compounds and on core 1s‐excitation spectrum of solid hcp helium single crystals, grown and in situ investigated in a Be 600 bars pressure cell at 5 K.
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