Abstract
Al/SiO2/Si (MOS) heterostructures which are typical of actual electronic devices have been studied with high spatial resolution scanning transmission electron microscopy (STEM). As the starting material for a cross-section view TEM sample, the n-type, 4" silicon wafer with 40 ran thick, thermally grown silicon dioxide and 120 nm thick aluminum overlayer was used. Sample preparation procedures and experimental conditions have been described elsewhere. Electron energy loss spectra were recorded over the low-loss region (0 to 100 eV) at 1, 2 and up to 5 nm intervals across interfaces in all three materials. The energy loss function was then obtained from experimental spectra after Fourier-log deconvolution of multiple scattering. We found the structure in the energy loss spectra below the bulk plasmon energy in the vicinity of either interface. They included 3.5 - 4 eV and 7 - 8 eV peaks as clearly seen in Fig.1.
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