Abstract
Raman scattering by magnetoplasma excitations in doped semiconductors for arbitrary experimental geometry is considered. A theory, based on the generalized Landau quasiparticle picture, is developed in order to obtain the scattering cross section. We consider an application to the case of a nondegenerate plasma in parabolicband semiconductors. The geometry-dependent mixing between the hybrid-plasma first cyclotron mode and the first Bernstein mode is studied. We also discuss field-dependent attenuation effects.
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