Abstract
Resonance enhanced inelastic light scattering from a quasi-two-dimensional electron gas confined at the interface of abruptly doped $\mathrm{GaAs}/n\ensuremath{-}{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ heterojunctions has been measured. The samples were fabricated using molecular-beam epitaxy with a high-contrast doping technique. The results show strong evidence for intersubband excitations in a two-dimensional electron system.
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