Abstract
Inelastic electron tunneling (IET) spectra of clean ultrahigh vacuum (UHV) prepared (Al/Al oxide/Pb) tunnel junctions are discussed. Microcrystalline Al oxide is shown to grow on these Al films. This is in contrast to the formation of amorphous Al oxide in the common high vacuum (HV) preparation process. The IET-spectra of UHV prepared tunnel junctions are free of peaks due to contaminations. Conclusions concerning the growth of oxides on Al films are drawn.
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