Abstract
Spintronics needs half-metallic materials implemented in technologically relevant devices. We prepare Co2MnSi/AlOx/Co7Fe3 junctions showing a tunneling magnetoresistance of 94.6% at 1 mV and 20 K. Their inelastic electron tunneling spectra at 20 K show typical magnon and phonon excitations in the electrode and the barrier and an additional shoulder around −22 mV not observed in Co7Fe3/AlOx/Ni81Fe19 reference junctions. Furthermore, the bias voltage and temperature dependence of the tunneling magnetoresistance is considerably larger than for the reference junctions. The transport properties are discussed with respect to a variety of current contributions associated with the structural and magnetic properties of the Co2MnSi/AlOx interface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
