Inelastic Electron Tunneling Spectra in Pb-GaSxSe1-x-Pb Junctions

Abstract

The mode behaviors of the zone-edge phonons in the pseudo-binary layer-type semiconductor GaS x Se 1- x (0 ≦ x ≦1) have been analyzed in terms of the inelastic electron tunneling (IET) spectra in Pb-GaS x Se 1- x -Pb junctions. The IET spectral peaks correspond to those phonon energies with their extrema in the density of states at the zone-edges. The x -dependence of the phonon energy thus determined indicates that most of these phonons exhibit two-mode behaviors.