Abstract
Stable high voltages in solar cells can be transferred directly to modules with no losses and are becoming increasingly important. Solar cells with high voltages have lower temperature coefficients and therefore higher energy yield in PV systems, particularly for those exposed to high temperatures (e.g., in desert regions). This paper presents the optimization of a large area n -type passivated emitter rear and totally diffused rear-junction ( n -PERT-RJ) solar cell to reach open-circuit voltages exceeding 690 mV and 22% stable solar cell efficiencies by using industrial diffusions and screen-printed metallization on both sides. With a free energy loss analysis and Quokka3 simulations, the recombination and resistive loss mechanisms in the n -PERT-RJ solar cells are identified and a guideline for future development is given, showing a practical roadmap toward 700 mV open-circuit voltages and solar cell efficiencies approaching 23%.
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