Abstract
In this paper we present first results concerning different thermal evaporation processes for thin aluminum layers, which are carried out on a pilot system with a throughput of up to 540 wafers/h (156 × 156 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ). To qualify the processes the deposited aluminum layers were evaluated with respect to homogeneity and conductivity. Additionally the effect of the different processes on the passivation quality of a thermally grown 100 nm thick SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> was analyzed by means of lifetime measurements, indicating a negligible effect of the conducted process variations on the passivation quality. Finally high-efficiency silicon solar cells were prepared to determine the overall potential and to compare it with an electron beam (e-gun) evaporation process, which is used as a standard process in our laboratory. An efficiency of up to 21% was achieved by the high deposition rate technique performing at least as well as our standard high efficiency process.
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