Industrial metalorganic chemical vapor deposition technology for the growth of YBa 2Cu 3O 7−∂

Abstract

MOCVD is the established technology for the mass production of compound semiconductors for e.g. opto-electronic devices. To transfer the MOCVD technology for HTS films to the standard MOCVD technology used in semiconductor production two major challenges have to be solved: 1. the Ba-precursor instability and 2. the demonstration of uniform of HTS films onto large area substrates. This paper presents an industrial MOCVD process solving these challenges using a new stable fluorinated Ba-precursor and a Gas Foil Rotation® susceptor. On a 2 inch diameter substrate area state-of-the-art YBCO thin films were fabricated having a thickness uniformity of 1% and compositional uniformity of 2% and 5% for Y/Ba and Cu/Ba, respectively. The films show a surface morphology with low defect density (<5 within 100 μm 2) and excellent superconducting properties ( T c (50%)>90 K, j c ( T=77 K, ( B=0 T)>5×10 6 A cm −2). The residual contamination by fluorine was determined by SIMS to be less than 250 ppm. This gives the strong evidence that this industrial process can be transferred to the Multiwafer Planetary Reactors® for mass production.