Abstract
Inductively coupled plasma reactive ion etching (ICP-RIE) of :H solid electrolyte films was investigated using -based plasma. :H etch rates were studied as a function of the /Ar chemistry, ICP coil power, bias voltage, and working pressure. Scanning electron microscopy and atomic force microscopy were employed to characterize the etch rate and root-mean-square surface roughness of etched samples. It was found that in comparison with -based gas mixtures, pure plasma results in a high etch rate of :H layer, suggesting an abundance of B and BCl radicals made up of a volatile compound such as , BCl-O, and Zr-Cl bond. In addition, Auger electron spectroscopy analysis exhibits that the -based etching process produces no change in surface stoichiometry of the :H films.
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