Abstract
Sputter deposited FeRhN films with a B/sub s/ value of more than 20 kG were used as high moment flux enhancement layer in the write element in order to achieve a recording density of 63.2 Gb/in/sup 2/. This layer was disposed between write gap and upper portion of the top pole, which was made of Ni/sub 45/Fe/sub 55/ with a B/sub s/ of 16 kG. A 36 dB overwrite and nonlinear transition shift of less then -20 dB were obtained at this recording density. A finite element model was used to calculate the longitudinal field and field gradient at the medium location. The results suggested significant increases of both by incorporating the flux enhancement layer.
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