Induction heating system operation by soft switching GaN heterojunction field effect transistors

Abstract

The induction heating (IH) system with a soft switching was fabricated using AlGaN/GaN heterojunction field effect transistors (HFETs). The operation current and breakdown voltage of an AlGaN/GaN HFET were over 50 A and 800 V, respectively. The specific on-resistance was 10 mOmegacm2. The turn-on and turn-off time were less than 20 ns, respectively. We fabricated the IH system with a soft switching circuit which can be driven using normally-on AlGaN/GaN HFETs. The IH system with a soft switching using normally-on AlGaN/GaN HFETs was demonstrated for the first time. Then output power was 3.2 kVA.