Abstract

A scanning-tunneling microscope has been used to induce efficient local desorption of benzene from Si(100) at low currents (<100 pA), sample biases (approximately -2.4 V) and temperatures (22 K). A theoretical model based upon first principles electronic structure calculations and quantum mechanical wave packet dynamics describes this process as occurring via transient ionization of a pi state of the adsorbed molecule. This model accounts for the unexpected efficiency and sharp threshold of the yield.

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