Induced photopleochroism of p-GaAlAs/p-n-GaAs structures

Abstract

The polarization photosensitivity appearing when linearly polarized radiation impinges obliquely on the reception plane coated by the anodic oxide in anodic-oxide/p-Ga0.3Al0.7As/p-n-GaAs photoconverter structures is investigated experimentally. It is established that the induced photopleochroism of the structures increases with increasing angle of incidence according to a quadratic law and is determined in the long-wavelength spectral region (ℏω<1.5 eV) by optical processes on the air/anodic-oxide interface. The “dip” discovered in the spectral dependence of the induced photopleochroism coefficient in the 1.6 to 3-eV range is associated with bleaching, for which a drop in the induced photopleochroism (PI→0) can serve as a criterion. It is concluded that polarization spectroscopy can be employed for the diagnostics of bleaching in GaAlAs/GaAs photoconverter structures.