Abstract
Now, compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Despite the attractive properties of compound semiconductors, such as high atomic number, high density, wide band gap, low chemical reactivity and long-term stability, poor hole and electron mobility-lifetime products degrade the energy resolution of these detectors. The main objective of the present study is in development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping. The formulae for the moments of the distribution function of the induced charge and the formulae for the mean amplitude and the variance of the signal at the output of the semiconductor detector with a cylindrical geometry were derived. It was shown that the power series expansions of the detector amplitude and the variance in terms of the inverse bias voltage allow determining the Fano factor, electron mobility lifetime product, and the nonuniformity level of the trap density of the semiconductor material.
Highlights
Compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications
The energy resolution of a semiconductor detector depends on the fluctuations in the process of charge carriers generation, in the process of charge induction on the detector electrodes, caused by charge carriers
The main objective of the present study is the development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping
Summary
Compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Theoretical consideration of the stochastic process of the charge induction in cylindrical geometry with accounting for the charge carrier trapping was considered. Theoretical consideration of the stochastic process of charge induction in a hemispherical geometry with accounting for electron trapping was considered in [1]. The general formulae for the moments of the distribution function of the induced charge on the electrodes of a detector with a cylindrical geometry are applicable to all coaxial X-ray detectors. They are applicable to the Reverse-Electrode Germanium detectors (REGe) with the ion-implanted boron p-type outer electrode, and the diffused lithium n-type inner electrode
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