Abstract
The present work is devoted to investigation of optical absorption in pure Gd3Ga5O12 (GGG) single crystals in the spectral range 0.2–1.1 μm induced under influence of the U ions irradiation with energy 2640 MeV and a fluence 10–10 cm−2. The induced absorption for 10 cm−2 is caused by recharging of point defects, both growth ones and impurities. After irradiation by U ions with fluences starting from 3×10 cm−2 the absorption rise is probably caused by contribution of the lattice destroying as a result of heavy ion bombardment as well as radiation displacement defects.
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