Individual silicon nanocrystals photo-current response confirming the quantum single charge residence on single electron nanopixel devices

Abstract

In this original work we report the photocurrent (PC) properties of nanopixel photodetectors containing a few number of silicon nanocrystals (Si-ncs) (4 Si-nc per pixel for our case). PC results performed on the nanopixels shows the individual contribution of each nanocrystal (a single response per charge for each Si-nc). The influence of quantum dots (QDs) size on transition energies has been calculated using 2D symmetrical self-consistent Poisson–Schroïdinger simulations. These quantum simulations have been used to propose a QD filling model based on strong confinement process. Finally, our results confirm that the nanopixel device acts as single quantum level photodetectors, and it can be added to high sensitive quantum tunneling (QT) devices. • Impressive performance of nanopixel photodetectors containing a few number of silicon nanocrystals. • Individual contribution of each QD. • The nanopixel device acts as single quantum level photodetectors.