Abstract

This paper reports on the fabrication of indium-zinc-tin-oxide (IZTO) transparent conductive film deposited by direct current (DC) reactive magnetron sputtering. The electrical, structural, and optical properties of IZTO film were investigated by Hall measurement, X-ray diffraction (XRD), and optical transmission spectroscopy with various sputtering powers. The IZTO film prepared used power at 100 W showed the lowest resistivity of 5.2 × 10−4 Ω cm. To accomplish rapid switching and high optical modulation, we have fabricated an electrochromic device (ECD) consisting of an working electrode (WO3 electrode film deposited on IZTO/ITO/glass) and a counter-electrode (Pt mesh) in 0.2 M LiClO4/PC liquid solution. The device demonstrated an optical contrast of 44% and switching times of 4.6 s and 8.1 s for the coloring and bleaching state, respectively, at the wavelength of 550 nm.

Highlights

  • An electrochromic device (ECD) is based on a well-known reversible optical switching phenomenon and is an enabling technology for smart windows, optical information displays, variable-reflectance mirrors, electronic papers, and switch mirrors [1]

  • The chemical reaction of a WO3 electrode film are due to reversible oxidation/reduction reactions induced by electrochemical double injection/extraction of positive ions and electrons into/outside the host of WO3 lattice in transition of W5+ and W6+ [3,4]

  • We focus on fabricating IZTO films using direct current (DC) magnetron sputtering powers by modifying surface of ITOonasfabricating a new transparent electrode

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Summary

Introduction

An electrochromic device (ECD) is based on a well-known reversible optical switching phenomenon and is an enabling technology for smart windows, optical information displays, variable-reflectance mirrors, electronic papers, and switch mirrors [1]. Indium tin oxide (ITO), known for its good electrical conductivity, has to be deposited at high temperatures and post-annealed at a temperature above 200 ◦ C. This annealing temperature causes the ITO films to be crystallized and roughened [5]. We focus on fabricating IZTO films using DC magnetron sputtering powers by modifying surface of ITOonasfabricating a new transparent electrode. IZTO films using DC magnetron sputtering powers electrode in ECD, we have fabricated an electrochromic device (ECD). Electrode (WO3 electrode film deposited on IZTO/ITO/glass) and a counter-electrode (Pt mesh) in 0.2

Experimental
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Results
50 Carrier
75 W100 100
The curves
Conclusions

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