Abstract
ITO films were achieved by sintering at 500~550℃. This was possible by inducing a seeding effect on an ITO sol by producing crystalline ITO nanoparticles in situ during heat treatment. Two kinds of ITO sols (named ITO-A and ITO-B) were prepared at 2.0 wt% from indium acetate and tin(IV) chloride in different mixed solvents. The ITO-A sol showed a high degree of crystallinity of ITO without any detectable SnO₂ on XRD at 350℃/1 h, but the ITO-B sol showed a small amount of SnO₂ even after annealing at 600℃/1 h. The 10 wt% ITO-A//ITO-B showed the sheet resistance of 3600Ω/□, while the ITO-B sol alone showed 5200 Ω/□ by sintering at 550℃ for 30 min. Processing parameters were studied by TG/DSC, XRD, SEM, sheet resistance, and visible transmittance.
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