Abstract
Tin-doped indium oxide (ITO) films were prepared by the metallo-organic decomposition process to have nominal composition In 1.91Sn 0.09O 3. The films were prepared by spinning a solution of the metallo-organic precursors on various substrates, firing the organic films to 550 °C in air and then annealing at various temperatures in air. The effect of annealing temperature on grain size, resistivity, Hall mobility and transmittance was studied. It was determined that the films were degenerate n-type semiconductors, and the transmittance of ITO films annealed at 650 °C was greater than 95% in the 450–1000 nm wavelength range.
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