Abstract
Surface segregation of indium in strained Ga 0.8In 0.2As/GaAs quantum wells is studied by means of sequential MBE depositions controlled by reflection high energy electron diffraction (RHEED) observations, each followed by in-situ ultraviolet photoelectron spectroscopy (UPS) measurements. The amount of segregated In at the surface and the composition profiles at the interfaces are precisely determined and are found to be quantitatively described by a simple model of local equilibrium between the surface and subsurface layers. The measured profiles differ strongly from the intended square profiles and must be taken into account to correctly predict the position of the energy levels in such quantum wells. This is confirmed by photoluminescence (PL) measurements that show the expected energy shifts. We also demonstrate the possibility to improve the abruptness of the GaAs on GaInAs interface using short annealing steps to reevaporate the segregated In.
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