Abstract
We have used energy-filtered transmission electron microscopycombined with low-temperature photoluminescence to study the effects ofindium segregation within (111)B oriented GaAs-InGaAs single quantumwells. The microscopy provides an accurate measure of the relative indiumprofile whilst the photoluminescence allows the determination of theabsolute concentrations of indium. A thermodynamic model of thesegregation process reproduced the main features of the distribution ofindium in the quantum wells. We have also studied a single quantum wellgrown immediately following the deposition of an InAs monolayer, intendedto compensate for the loss of indium by segregation. Both modelling andmeasurement show that the effect is merely to broaden significantly theresulting quantum well.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
