Abstract
The effect of indium surface segregation on electronic states and excitonic properties is investigated experimentally and theoretically in (111)B-grown (In,Ga)As/GaAs strained piezoelectric quantum wells. Thermally detected optical absorption and electroreflectance experiments are performed on two samples grown by molecular beam epitaxy and containing 7 and 14 wells. Excitonic energies and oscillator strengths are calculated by a variational method within the effective mass approximation. The influence of indium segregation on the piezoelectric field strength and the oscillator strength of excitonic transitions is analyzed.
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