Abstract
Indium segregation during the growth of multilayer InAs/GaAs(0 0 1) quantum dot (QD) structures has been studied using reflection high-energy electron diffraction (RHEED) measurements of the critical coverage ( θ crit) for second layer QD formation. A model bilayer structure was used in order to separate the effects of segregation and strain. The structure comprises an upper QD layer formed on top of a buried two-dimensional InAs layer. Growth temperature and the GaAs spacer layer thickness ( S) are both found to have a significant effect on θ crit. Indium segregation during growth of the capping layer leads to the presence of a surface In adatom population prior to deposition of the second InAs layer. Segregation occurs for S up to 8 nm at 510 °C, this value being reduced by ∼50% at 450 °C.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
