Abstract
Thin films (approx. 1 ..mu..m thick) and large grains (approx. 40 x 40 ..mu..m) of InP were epitaxially deposited on low-cost recrystallized CdS (RXCdS) substrates at 280/sup 0/C by planar reactive deposition. At 380/sup 0/C, a 0.4- to 1.0-..mu..m-thick In-Cd-S transition layer between the InP and the RXCdS degrades the quality of the InP epitaxy. However, p-type InP films were prepared at this temperature by Be-doping and capping the entire RXCdS substrate with InP. Large grains of CdTe (approx. 40 ..mu..m) were also deposited on RXCdS substrates at 460/sup 0/C by physical vapor deposition. The grain size of the RXCdS is typically 40 ..mu..m. However, during this period we prepared RXCdS with grains having dimensions up to 300 ..mu..m.
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