Abstract
This paper describes the development of indium phosphide TEOs for use in the millimetre wave frequency range. After presenting a brief theoretical basis for the superiority of indium phosphide over its chief rival gallium arsenide, details are given on the choice of epitaxial material used. Device fabrication is then considered with emphasis placed upon the special demands of mm-wave operation. Oscillator performances are presented which verify the theoretically predicted superiority of indium phosphide at these high frequencies. Finally, attention is drawn to the 2nd-order stability parameters exhibited by practical indium phosphide oscillator modules.
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