Indium phosphide nanowire network: growth and characterization for thermoelectric conversion

Abstract

Indium phosphide (InP) nanowires were grown by metal organic chemical vapor deposition (MOCVD). InP nanowires grew in the structure of three-dimensional networks in which electrical charges and heat can travel over distances much longer than the mean length of the constituent nanowires. We studied the dependence of thermoelectric properties on geometrical factors within the InP nanowire networks. The InP nanowire networks show Seebeck coefficients comparable with that of bulk InP. Rather than studying single nanowires, we chose networks of nanowires formed densely across large areas required for large scale production. We also studied the role played by intersections where multiple nanowires were fused to form the nanowire networks. Modeling based on finite-element analysis, structural analysis, and transport measurements were carried out to obtain insights of physical properties at the intersections. Understanding these physical properties of three-dimensional nanowire networks will advance the development of thermoelectric devices.