Abstract
Indium nitride thin films were obtained by the reactive sputtering method. The metallic indium target was sputtered by nitrogen gas with rf magnetron sputtering equipment. The stoichiometric indium nitride film showed high Hall mobility (363 cm2 (V s)−1) and low carrier concentration (5.98×1018 cm−3). To suppress the nitrogen vacancies, the reevaporation of atomic nitrogen from the substrate must be suppressed by lowering the substrate temperature and the resputtering of atomic nitrogen must be minimized by adjusting the total pressure close to the upper limit of the effective pressure for deposition.
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