Abstract
We report on the successful growth of high-quality indium nitride (InN) thin films on the GaN(001)/SA(001) substrate, via the technique of chemical beam epitaxy (CBE) using the highly volatile source reagent HN3. A detailed characterization of the as-grown films have also been carried out using field-emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), selected-area electron diffractometry (SAED), X-ray diffractometry (XRD) and rocking curve (XRC). HR-TEM micro graphs and SAED patterns show the high crystallinity and nearly epitaxial growth of InN. In addition, using the GaN(001)/SA(001) substrate without any buffer layer, the deposited InN films exhibit nearly single (001) out-plane orientation. The effects of deposition temperature and rate on the surface morphology and out-plane orientation have been observed and discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
