Abstract
The properties of 2D InN are predicted to substantially differ from the bulk crystal. The predicted appealing properties relate to strong in- and out-of-plane excitons, high electron mobility, efficient strain engineering of their electronic and optical properties, and strong application potential in gas sensing. Until now, the realization of 2D InN remained elusive. In this work, the formation of 2D InN and measurements of its bandgap are reported. Bilayer InN is formed between graphene and SiC by an intercalation process in metal-organic chemical vapor deposition (MOCVD). The thickness uniformity of the intercalated structure is investigated by conductive atomic force microscopy (C-AFM) and the structural properties by atomic resolution transmission electron microscopy (TEM). The coverage of the SiC surface is very high, above 90%, and a major part of the intercalated structure is represented by two sub-layers of indium (In) bonded to nitrogen (N). Scanning tunneling spectroscopy (STS) measurements give a bandgap value of 2± 0.1eV for the 2D InN. The stabilization of 2D InN with a pragmatic wide bandgap and high lateral uniformity of intercalation is demonstrated.
Highlights
The properties of 2D InN are predicted to substantially differ from the bulk materials but 2D electrocatalysts as well.[2] 2D group III nitrides are mainly investicrystal
There are a few successful experiments on achieving 2D GaN and 2D AlN,[3,4,5,6] which appear as ultrawide
The thickness successful formation of 2D GaN was uniformity of the intercalated structure is investigated by conductive atomic force microscopy (C-Atomic Force Microscopy (AFM)) and the structural properties by atomic resolution transmission electron microscopy (TEM)
Summary
This value differs a lot from the value of 0.7 eV for the bulk (or thick) InN crystals, it is reasonable to observe a larger bandgap due to the quantum confinement as previously reported in the case of 2D GaN.[3]. The same figure contains the I–V curve (dashed line) corresponding to the thicker regions of intercalated InN observed in the HREM image in Figure 2b and (marked by 3D c-InN) from which a lower bandgap of ≈1 eV has been extracted The MOCVD method provides a more general route for the synthesis of 2D group III nitrides
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