Indium Localization‐Induced Red, Green, and Blue Emissions of Semipolar (11‐22) GaN‐Based Light‐Emitting Diodes

Abstract

Red, green, and blue electroluminescence (EL) in semipolar (11‐22) GaN‐based light‐emitting diodes (LEDs) is achieved using SiO2 hexagonal patterns epitaxial lateral overgrowth (HP‐ELO). The size, density, and area of arrowhead‐like surface structure of the semipolar (11‐22) HP‐ELO GaN are significantly affected by increasing the SiO2 hexagonal patterns from 6.0 to 15.0 μm. The full width at half maximum and the blueshift wavelength of EL spectra increases with increasing from 6.0 to 9.0 μm, and then decreases with increasing the hexagonal pattern width to 15.0 μm. These results show a similar tendency to the surface area of arrowhead‐like structure. In addition, micro‐EL images show that indium localization‐induced low energy emission initiates at the front end of arrowhead‐like pattern, and then blueshifted emissions propagate to the side edges as the injection current increases. Therefore, it suggests that HP‐ELO can control the arrowhead‐like surface structure composed of different indium compositions, which can achieve red, green, and blue emissions of a semipolar (11‐22) HP‐ELO GaN‐based LED.