Abstract
InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 µm and their height was 4 and 1 µm. InGaN wells grown on stripes made in the direction perpendicular to the off-cut had a rough morphology and, therefore, this azimuth of stripes was not further explored. InGaN wells grown on the stripes made in the direction parallel to the GaN substrate off-cut had a step-flow-like morphology. For these samples (grown at low temperatures), we found out that the InGaN growth rate was higher for the narrower stripes. The higher growth rate induces a higher indium incorporation and a longer wavelength emission in photoluminescence measurements. This phenomenon is very clear for the 4 µm high stripes and less pronounced for the shallower 1 µm high stripes. The dependence of the emission wavelength on the stripe width paves a way to multicolor emitters.
Highlights
Most electronic and optoelectronic devices are fabricated on laterally homogeneous epitaxial structures, having structures of properties varying in lateral directions would offer new possibilities, for example, monolithic integration of different devices
In one of our previous papers [26] we reported on InGaN quantum wells grown on stripes with various off-cuts
The observed luminescence wavelength variations on different stripe widths may depend on the following factors and their combinations: (i) variations in quantum-confined Stark effect (QCSE)
Summary
Most electronic and optoelectronic devices are fabricated on laterally homogeneous epitaxial structures, having structures of properties varying in lateral directions would offer new possibilities, for example, monolithic integration of different devices. Such epitaxial structures are prepared by lateral patterning (lithography and masking) and overgrowth. The first epitaxial lateral overgrowth (ELOG) of silicon and GaAs over SiOx masks was demonstrated almost 40 years ago [1,2,3,4] This technology was used for GaN growth on highly mismatched substrates—sapphire [5,6,7], SiC [8], or silicon [9]. In that kind of epitaxy, the suspended wings contained much lower dislocations
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