Abstract
ABSTRACTInGaN alloys with (0001) or (000) polarities are grown by plasma-assisted molecular beam epitaxy. Scanning tunneling microscopy images, interpreted using first-principles theoretical cal- culations, show that there is strong indium surface segregation on InGaN for both (0001) and (000) polarities. The dependence on growth temperature and group III/V ratio of indium incorporation in InGaN is reported, and a model based on indium surface segregation is proposed to ex- plain the observations.
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