Abstract
General trends in In incorporation into InGaN ternary compounds during plasma-enhanced MBE are studied theoretically. The theoretical predictions agree well with the experimental data obtained by Böttcher et al. [3]. Growth conditions favorable for indium droplet appearance on the growing InGaN surface are revealed. It is shown that there exists a narrow growth window where efficient In incorporation into InGaN can be reached without droplet formation. Elastic strain caused by the lattice constant mismatch between the InGaN and the underlying GaN layer affects significantly the critical reactive nitrogen flux necessary to avoid the droplet appearance.
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