Abstract
In situ In droplet elimination by radical beam irradiation (DERI) was demonstrated for the growth of high-quality InN by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). In DERI, metal In droplets were eliminated and transformed to InN epitaxially on an underlayer by successive nitrogen radical beam irradiation. This method supplies simple and reproducible growth of high-quality InN with a flat surface. This method also supplies new and effective nitrogen radical beam monitoring. Reproducible growth of high-quality thick InN films by repeating InN growth under an In-rich condition and the subsequent InN formation by DERI was also demonstrated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
