Indium doping effects on vapor-phase growth of ZnS on GaP

Abstract

Single-crystal layers of ZnS have been grown on GaP substrates in a hydrogen transport system. By the addition of In to the reactant agents, the orientation dependence of the growth rates of ZnS are reversed for (111)A and (111)B substrates. The improvement of crystallinity of the grown layers can be seen by the surface morphology observation and x-ray and reflection high-energy electron diffraction analyses. These phenomena are undoubtedly caused by the In-incorporation effects during the epitaxial growth of ZnS.