Abstract
Pure and Indium doped in Cadmium Zinc Sulfide Cd0.6Zn0.4S thin films were deposited onto glass substrate at different substrate temperature (275-375)C0 , at different Indium doping concentration (1-10) ml by spray pyrolysis technique , using precursor solution of Cadmium Chloride , Zinc Chloride , and Thiourea as Cadmium , Zinc and Sulfide source respectively The effect of Indium doping on the structure and morophology of prepared thin films have been investigeted . X-ray diffraction (XRD) , scanning electron microscope (SEM) have been used examining these samples .XRD studies , have revealed that the films are polycrystalline , with preferentid orientation of the crystallites in film grown producing a strong hexagonal (002)or cubic (111) peak . the grain sizes were found in the rang of (175-339.68)nm and (214-258) nm depending on Indium dopinconcentration and annelingtemperature. And these results have been confirmed by scanning electron microscope . The best crystallinity of the films was obtained at the substrate temperature of 350 C0 and Indium doping concentration of5ml.
Highlights
Cadmium Zinc Sulfide is ternary II-VI compound semiconductor polycrystalline
I lican et al .(2005),[4] studied X-ray diffraction of undoped and In-doped Cd 0.22 Zn0.78S films when produced by the spray pyrolasis deposition method at 275 oC substrate temperatures
The spraying period is 7 secand stopping for 54 sec to avoid the excessive cooling of the substrate.The system is kept in an aluminum and glass chamber, and the chamber box is fitted with a fan to pull out the toxic gases produced during the decomposition of the spray solution
Summary
Cadmium Zinc Sulfide is ternary II-VI compound semiconductor polycrystalline. Thin films of Cd1-xZnxS are known to have properties in between those of Cadmium Sulfide and Zinc Sulfide.[1].Cd1-xZnxS thin films have been widely used as a wide band gap window material in hetrojunction photovoltaic solar cells.[2]. Oztas and Bedir (2001)[3], studied the structure, electronic and optical properties of Cd1-x ZnxSand Cd1-x ZnxS(In) fabricated by chemical spray method by using X-ray diffraction which shows a hexagonal(002) , (100) and (101) plane. I lican et al .(2005),[4] studied X-ray diffraction of undoped and In-doped Cd 0.22 Zn0.78S films when produced by the spray pyrolasis deposition method at 275 oC substrate temperatures. This work describes the X-ray diffraction spectra of all films at room temperature and the films showed hexagonal and formed as Cd0.22Zn0.28S polycrystalline structure.The aim of this research is the investigation the structural properties of the fabricated films befor and after In-doping with different concentration. In order to distribute the sprayed solution regularly on the substrate to get uniform thickness of single layer films, the nozzle spray with constant spray rate 4 ml/min was fixed perpendicular to the hot heater plate. The prepared films stored in the oven at a constant temperature of 25 oC
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