Abstract
Indium-doped MgxZn1-xO (MgxZn1-xO:In) thin film and ZnO:In thin films were successfully grown by remote plasma-enhanced metalorganic chemical vapor deposition (RPE-MOCVD). The In supply source used is trimethylindium (TMIn). The surface morphology, structural changes, and optical band gap energy in MgxZn1-xO:In were investigated by varying the amount of the supplied TMIn and were compared with ZnO:In systems. Our main achievement point is that we have markedly improved the surface morphology of Mg0.05Zn0.95O:In films from being pillar like to being film like with an increase in the amount of indium. The improved green electoluminescence emission (EL) characteristic the ZnO-based DH system was employing the Mg0.05Zn0.95O:In film here and in conclusions.
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