Abstract
A brief review of different aspects of In atoms in the CdTe lattice behavior, necessary for scientific preparation of radiation-sensitive material is presented. Data concerning the CdTe–In T– x phase diagram, In segregation, diffusion and solubility as function of stoichiometric relations in CdTe and temperature are included. Low- and high-temperature electrical measurements results are discussed in the framework of compensation phenomena. A short review concerning the manufacture of In-doped CdTe crystals as well as their practical use is included.
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