Indium Donor Complexes with Cation Vacancies in CdTe and ZnSe

Abstract

Very dilute (10{sub 12} cm{sup {minus}3}) indium donors in CdTe and ZnSe powders and in CdTe single crystals were investigated using {sup 111}In Perturbed angular correlation spectroscopy. Most indium atoms are in uncomplexed sites but can form weakly-bound complexes with native defects in very defective material. The only complex observed in CdTe is an indium-Cd vacancy pair. The CdTe in which these pairs occur is apparently n-type, most Cd vacancies are free and doubly-charged, and the binding energy with indium is 0.15 eV. In ZnSe, indium can pair with a Zn vacancy or with some other presently unidentified defect. These complexes form in ZnSe containing large concentrations of both free Zn vacancies and complexes of Zn vacancies with other defects. In CdTe, the pair formation equilibration time constant is two days at 15C,an implication that Cd vacancies are mobile at room temperature. Lattice relaxation around a Cd vacancy in CdTe was probed by single crystal PAC experiments.