Abstract
Indium bumps properties for flip chip assembly of CdHgTe and InAs infrared detector arrays and silicon multiplexer have been investigated. It is shown that the indium bumps fabricated by a vacuum indium deposition and a photolithography, contain a surface layer more rigid in comparison with the bulk indium and having a poor adhesive ability. This layer prevents bumps from the good adhesive contact during assembly and leads to bumps disconnection under a temperature cycling because of the difference in the thermal-expansion coefficients of the infrared detector material and the silicon multiplexer. Designed in this work method of precise removal this layer and subsequent reflow increase the adhesion strength between indium bumps more than order and, thereby, increase the hybrid detector reliability.
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