Indium Antimonide Nanoparticles Synthesized using Inert Gas Condensation Technique.

Abstract

ABSTRACTNanoparticles (NPs) of Indium Antimonide (InSb) were synthesized using a vapor phase synthesis technique known as Inert Gas Condensation. NPs were directly deposited, at room temperature and under high vacuum, on glass cover slides, TEM grid, 1 inch-square (111) p-type Silicon wafer and Sodium Chloride substrates. XRD study revealed the crystalline behavior of these NPs exhibiting a cubic symmetry with preferred growth direction of (111). The average grain size of the NPs obtained using XRD results and the Debye-Scherrer formula was 25.62 nm. TEM studies showed a bimodal distribution of NPs with average NPs size of 13.70 and 33.20 nm. These values are consistent with the value obtained using XRD. 1:1 composition ratio of In:Sb was confirmed by the Energy Dispersive X-Ray Spectroscopy studies. The band gap of the NPs obtained using Fourier Transform Infrared (FTIR) spectroscopy was 0.413 eV at 300 K, which indicates quantum confinement in the band structure of these NPs.