Abstract
Abstract The perturbed γγ-angular correlation (PAC) technique has been used to study the hyperfine parameters for 111 In 111 Cd on different adsorption sites on Si(111)7 × 7, Si(111)2 × 1 and Si(100)2 × 1, respectively. Unique, strong electric field gradients are detected and studied as a function of substrate temperature. Possible microscopic adsorption geometries are discussed and compared to the results obtained earlier by different techniques. For Si(111)7 × 7 the mobility of the probe atoms is determined from isochronal annealing cycles. In case of Si(100) two different indium superstructures are identified and an irreversible phase transition is observed on successive annealing. The results are compared to earlier investigations of metal surfaces.
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