Abstract
The electronically mediated indirect interaction between localized impurities, each of which generates an isotropic local disturbance on the substituted metallic ion sites, in polar semiconductors with different band-edge-state parities is studied. The second-order-perturbation energy is evaluated with an interband matrix element, which is consistent with the hybridization of the basic states involved in the interband transitions. The calculated indirect interaction exhibits a characteristic change from negative to positive as the separation distance increases and decays exponentially in the long-range region.
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