Abstract
A full band structure calculation of resonant tunnelling through AlAs barriers using a nearest neighbour tight binding method has been compared with experiment. We report good agreement of our calculation with measurements both qualitatively and quantitatively. The peak resonant current densities agree to within 20%, without the parameter adjustments used in other studies. The major contribution to the tunnelling current is found to result from X-like states in the AlAs barriers. This is the first rigorous theoretical confirmation of the conclusions arrived at from a number of other experimental studies.
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