In-depth resolutions of integrated circuits via X-ray based line modified asymmetric crystal topography

Abstract

X-ray diffraction topography is the name given to several X-ray diffraction techniques which permit the topography of planes within a crystal to be examined. The topographic techniques based on Bragg diffraction from a periodic crystal are extremely sensitive to imperfections and strains in the crystal, since any alteration to the interplanar spacing of the crystal will effect a corresponding change in the Bragg diffraction condition. Line modified asymmetric crystal topography (LM-ACT) is one such topographic technique which shows particular promise in the field of microelectronics. The LM-ACT system is designed with low angular divergence in the X-ray probe beam which allows details of device geometries on the order of microns to be resolved. A major advantage of LM-ACT is that it is a nondestructive technique. This paper describes the LM-ACT system and shows how the system has been applied to the study of integrated circuits after specific processing steps as well as with the final product.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>